CCD-Abbildner Bildwiedergabevorrichtung mit einer Teststruktur

Built=in test photodetector structure in CCD image sensor - is inserted into row of imaging detectors and provided with separate exposure control gate to corresp. exposure drain regions.

Abstract

The test structure (38) has a charge-coupled-device shift register (16) extending with a transfer gate (24) along a row of imaging photodetectors (14) on a semiconductor substrate (12). A separate exposure drain (34) is provided alongside each detector on the opposite side to which it is connected by an exposure control gate (36). The test structure comprises a number of identical test photodetectors (40) which share the exposure drain regions but have a separate test exposure control gate (42) supplied with voltage from an independent source (44). ADVANTAGE - Test structure is independent of threshold value shifts in elements or devices, and useful in mfg. environment where robust test methods are necessary.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (2)

    Publication numberPublication dateAssigneeTitle
    EP-1152599-A2November 07, 2001Eastman Kodak CompanyEingebaute Selbsttestsignale für Spaltenausgangsschaltungen in einem X-Y adressierbaren Bildsensor
    EP-1152599-A3March 26, 2008Eastman Kodak CompanySignaux intégrés d'auto-test pour des circuits de sortie de colonne d'un capteur d'image